Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

Band-to-Band Tunneling Transistors: Scalability and Circuit Performance

A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences and the Designated Emphases in Nanoscale Science and Engineering and Energy Science and Technology in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Profes...

Band-to-band tunneling in carbon nanotube field-effect transistors.

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Metallic-nanoparticle assisted enhanced band-to-band tunneling current

Metallic nanoparticle assisted band-to-band tunneling is proposed, and the impact of such nanoparticle induced states on the tunneling probability and current is modeled and analyzed. An analytical formula for tunneling probability is derived for the case of constant force, and it is shown that the incorporation of these particles in the forbidden gap can lead to a substantial increase in the t...

Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors